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| IRFP450N, SiHFP450N Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 77 26 34 Single D FEATURES 500 0.37 * Low Gate Charge Qg Results in Simple Drive Requirement * Improved Gate, Avalanche and Dynamic dV/dt Ruggedness * Fully Characterized Capacitance and Avalanche Voltage and Current * Effective Coss Specified * Lead (Pb)-free RoHS COMPLIANT TO-247 APPLICATIONS * Switch Mode Power Supply (SMPS) * Uninterruptible Power Supply * High Speed Power Switching G TYPICAL SMPS TOPOLOGIES S D G S N-Channel MOSFET * Two Transistor Forward * Half Bridge and Full Bridge * PFC Boost ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFP450NPbF SiHFP450N-E3 IRFP450N SiHFP450N ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Notes a. b. c. d. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). Starting TJ = 25 C, L = 1.7 mH, RG = 25 , IAS = 14 A (see fig. 12). ISD 14 A, dI/dt 510 A/s, VDD VDS, TJ 150 C. 1.6 mm from case. VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 500 30 14 8.8 56 1.6 170 14 20 200 5.0 - 55 to + 150 300d 10 1.1 UNIT V A W/C mJ A mJ W V/ns C lbf * in N*m TC = 25 C for 10 s 6-32 or M3 screw Document Number: 91232 S-Pending-Rev. b, 26-Jun-08 WORK-IN-PROGRESS www.vishay.com 1 IRFP450N, SiHFP450N Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.64 C/W UNIT SPECIFICATIONS TJ = 25 C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Coss Coss eff. Qg Qgs Qgd td(on) tr td(off) tf TEST CONDITIONS VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 8.4 Ab VDS = 50 V, ID = 8.4 A MIN. 500 3.0 7.9 - TYP. 0.59 2260 210 14 2410 59 110 20 63 29 25 MAX. 5.0 100 25 250 0.37 77 26 34 - UNIT V V/C V nA A S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VDS = 1.0 V, f = 1.0 MHz VGS = 0 V VDS = 400 V, f = 1.0 MHz VDS = 0 V to 400 Vc VGS = 10 V ID = 14 A, VDS = 400 V, see fig. 6 and 13b pF - nC VDD = 250 V, ID = 14 A RG = 6.2 ,VGS = 10 V, see fig. 10b - ns - 430 3.7 14 A 56 1.4 650 5.6 V ns C G S TJ = 25 C, IS = 14 A, VGS = 0 Vb TJ = 25 C, IF = 14 A, dI/dt = 100 A/sb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 400 s; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91232 S-Pending-Rev. b, 26-Jun-08 IRFP450N, SiHFP450N Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TJ = 150 C 10 10 1 1 TJ = 25 C 6.0V 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 10 0.1 6.0 V DS = 50V 20s PULSE WIDTH 7.0 8.0 9.0 10.0 VDS , Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics VGS , Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics 100 TOP RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V 3.0 ID = 14A 2.5 2.0 10 1.5 6.0V 1.0 0.5 1 1 10 20s PULSE WIDTH TJ = 150 C 10 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics TJ , Junction Temperature ( C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91232 S-Pending-Rev. b, 26-Jun-08 www.vishay.com 3 IRFP450N, SiHFP450N Vishay Siliconix 100000 10000 Coss = Cds + Cgd Ciss 1000 ISD , Reverse Drain Current (A) VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd 100 C, Capacitance(pF) 10 TJ = 150 C 100 Coss 1 10 Crss TJ = 25 C 0.1 0.2 1 1 10 100 1000 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 VDS, Drain-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 20 1000 ID = 14A VDS = 400V VDS = 250V VDS = 100V VGS , Gate-to-Source Voltage (V) OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) 16 100 12 10 100sec 1msec Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 10000 VDS , Drain-toSource Voltage (V) 8 1 4 0 0 20 40 FOR TEST CIRCUIT SEE FIGURE 13 60 80 10msec QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 Document Number: 91232 S-Pending-Rev. b, 26-Jun-08 IRFP450N, SiHFP450N Vishay Siliconix 14 VGS VDS RD D.U.T. + - VDD 12 RG ID , Drain Current (A) 10 8 6 VDS 10 V Pulse width 1 s Duty factor 0.1 % Fig. 10a - Switching Time Test Circuit 4 2 0 25 50 75 100 125 150 90 % TC , Case Temperature ( C) Fig. 9 - Maximum Drain Current vs. Case Temperature 1 10 % VGS td(on) tr td(off) tf Fig. 10b - Switching Time Waveforms Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 PDM 0.05 t1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91232 S-Pending-Rev. b, 26-Jun-08 www.vishay.com 5 IRFP450N, SiHFP450N Vishay Siliconix 15 V VDS tp VDS L Driver RG 20 V tp D.U.T. IAS 0.01 + A - VDD A IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS , Single Pulse Avalanche Energy (mJ) 300 TOP 250 BOTTOM ID 6.3A 8.9A 14A 200 150 100 50 0 25 50 75 100 125 150 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Starting TJ , Junction Temperature ( C) Current regulator Same type as D.U.T. 50 k 12 V VGS QGS QG 0.2 F 0.3 F QGD D.U.T. + - VDS VG VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit www.vishay.com 6 Document Number: 91232 S-Pending-Rev. b, 26-Jun-08 IRFP450N, SiHFP450N Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T + Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + + - RG * * * * dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Inductor current Body diode forward drop Ripple 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91232. Document Number: 91232 S-Pending-Rev. b, 26-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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